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  MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 description the MSF18N50 is a n - channel enhancement - mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. he to - 220f package is universally preferred for all com mercial - industrial applications features ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% eas test ? extended safe operating area ? rohs compliant package a pplication ? high current, high speed switch ing ? pfc (power factor correction) packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds dra in - source voltage 50 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 18 a drain current - continuous (tc= 100 c ) 10.8 a i dm drain current pulsed 72 a e as s ingle pulsed avalanche energy 990 mj e ar repetitive avalanche energy 23. 5 mj dv/dt peak diode recovery dv/dt 4.5 v/ns p d power dissipation ( tc = 25 c) power dissipation (tc=100c) 235 w 1.8 w/ c
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit t j , t stg operating and storage temperat ure range - 55 to +150 c note: 1. repetitive rating: pulse width limited by maximum junction temperature thermal characteristics (tc=25c unless otherwise noted) symbol parameter max. unit s rthjc typical thermal resistance 0.53 c /w r ja 62.5 static characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs , i d =250a 3.0 5.0 v *r ds(on) v gs = 1 0v , i d = 9.0a -- 0.25 0.32 m b v dss v gs =0 v , i d =250a 500 -- -- v b v dss / t j i d =250a, referenced to 25 c 0.6 i dss v ds = 50 0v , v gs = 0 v v ds = 40 0v , v gs = 0 v , t j = 125 c -- -- 1 10 u a i gss f v ds = 3 0v, v d s = 0 v 100 n a i gss r v ds = - 3 0v, v d s = 0 v -- -- - 100 n a dynamic characteristics symbol test conditions min typ. max. unit s q g v ds = 40 0v,i d = 18 a, v gs =10 v -- 48.5 -- nc q gs -- 14 -- q g d -- 22 -- t d(on) v ds = 250 v, i d = 18 a, r g =25 -- 70 -- ns t r -- 190 -- ns t d(off) -- 100 -- ns tf -- 100 -- ns c iss v ds =25v, v gs =0v, f=1.0mhz -- 2500 -- pf c oss -- 400 -- pf c rss -- 40 -- pf
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 source - drain diode characteristics symbol test conditions min typ. max. unit s i s -- -- 1 8 a i sm -- -- 72 v sd if= 18a , v gs =0 -- -- 1.5 v t rr if= 18a , v gs =0 , dif/dt=100a/s -- 550 -- ns q rr -- 5.5 -- uc notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. l= 5.5 mh, i as = 18 a, v dd =5 0 v, r g =25 , starting t j =25 3. i sd Q 1 6 a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4. pulse test: pulse width Q 300 s, duty cycle Q 2% 5. essentially independent of operating temperature
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteris tics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 characteristics test ci rcuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge test circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & waveforms
MSF18N50 50 0v n - channel mosfet publication order number: [ MSF18N50 ] ? bruckewell te chnology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in an y other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by appli cable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, in cluding warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties descr ibed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or other wise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.


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